We have confirmed by analyzing beating patterns of Shubnikov-de Haas oscillations that a spin-orbit interaction of the conduction band in an InAs-inserted In Ga As/In Al As heterostructure can be controlled by applying the gate voltage. The change in the spin-orbit interaction can be attributed to t
β¦ LIBER β¦
Observation of the zero-field spin splitting of the second subband in an inverted In0.53Ga0.47As/In0.52Al0.48As heterostructure
β Scribed by C.M Hu; J Nitta; T Akazaki; H Takayanagi; J Osaka; P Pfeffer; W Zawadzki
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 89 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1386-9477
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