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Effects of high temperature annealing on the device characteristics of Ga0.52In0.48P/GaAs and Al0.52In0.48P/GaAs heterojunction bipolar transistors

✍ Scribed by H. K. Yow; P. A. Houston; C. C. Button; J. P. R. David; C. M. S. Ng

Publisher
Springer US
Year
1998
Tongue
English
Weight
184 KB
Volume
27
Category
Article
ISSN
0361-5235

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