Controlled growth of InP/In0.48Ga0.52P quantum dots on GaAs substrate

✍ Scribed by A. Ugur; F. Hatami; W.T. Masselink

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 865 KB
• Volume: 323
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2011.01.033

✦ Synopsis

Both the density and the ordering of InP quantum dots (QDs) grown on In 0.48Ga0.52 P/GaAs are controlled through the growth conditions. The control of the alignment of the QDs is achieved by determining the morphology of the In 0.48 Ga 0.52 P buffer through its growth temperature. For buffer layer growth temperatures near 470 1C, an undulated surface results, which act as a template for QDs aligned along the undulation ridges. Lower buffer layer growth temperatures near 440 1C result in smooth buffer layers and homogeneously distributed QDs; the density of the QDs is controlled by changing the growth rate of InP. Ultra-low density QDs are achieved (1 dot per mm 2 ) by reducing the InP growth rate down to 0.01 ML/s. Micro-photoluminescence measurements reflect the low density of the QDs. Because InP/ In 0.48 Ga 0.52 P QDs are promising photon sources for device applications with emission in the spectral window of highest Si-based detector efficiency, control of their ordering and density entirely through growth conditions aids in the development of a number of applications.