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Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

โœ Scribed by Takahiro Kitada; Tatsuya Saeki; Masanobu Ohashi; Satoshi Shimomura; Akira Adachi; Yasunori Okamoto; Naokatsu Sano; Satoshi Hiyamizu

Publisher
Springer US
Year
1998
Tongue
English
Weight
436 KB
Volume
27
Category
Article
ISSN
0361-5235

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๐Ÿ“œ SIMILAR VOLUMES

In0.53Ga0.47As>In0.52Al0.48As quantum wi
In0.53Ga0.47As>In0.52Al0.48As quantum wire structures grown on (775)B-oriented InP substrates by molecular beam epitaxy
โœ S. Hiyamizu; Y. Ohno; S. Shimomura ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 423 KB

Self-organized In,,,Ga,,,As/ In,,&.& quantum wire (QWR) structures were formed on (775)B InP substrates by molecular beam epitaxy (MBE) which showed good one-dimensionality (the polarization degree P [ = (I,, -I, )/(I,,+ I, )] as large as 0.2) and long emitting wavelengths in the range of 1.2 um at

Extremely flat interfaces in In0.04Ga0.9
Extremely flat interfaces in In0.04Ga0.96As/Al0.3Ga0.7As quantum wells grown on (411)A In0.04Ga0.96As substrates by MBE
โœ S. Hiyamizu; T. Saeki; T. Motokawa; S. Shimomura; T. Kitada; A. Adachi; Y. Okamo ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 115 KB

Pseudomorphic In 0.04 Ga 0.96 As/Al 0.3 Ga 0.7 As quantum wells (QWs) with well widths of 1.2, 2.4, 3.6, 4.8, 7.2 and 12 nm have been grown on (411)A In 0.04 Ga 0.96 As ternary substrates by MBE at growth temperature of T s = 520 โ€ข C. The interface flatness of the QWs was characterized by photolumin