Extremely flat interfaces in In0.04Ga0.96As/Al0.3Ga0.7As quantum wells grown on (411)A In0.04Ga0.96As substrates by MBE

✍ Scribed by S. Hiyamizu; T. Saeki; T. Motokawa; S. Shimomura; T. Kitada; A. Adachi; Y. Okamoto; T. Kusunoki; K. Nakajima; N. Sano

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 115 KB
• Volume: 21
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1996.0179

✦ Synopsis

Pseudomorphic In 0.04 Ga 0.96 As/Al 0.3 Ga 0.7 As quantum wells (QWs) with well widths of 1.2, 2.4, 3.6, 4.8, 7.2 and 12 nm have been grown on (411)A In 0.04 Ga 0.96 As ternary substrates by MBE at growth temperature of T s = 520 • C. The interface flatness of the QWs was characterized by photoluminescence at 4.2 K. Extremely flat interfaces have been realized in the QWs on the (411)A InGaAs substrates, which is better or sometimes much better than In 0.04 Ga 0.96 As/Al 0.3 Ga 0.7 As QWs grown on (100) In 0.04 Ga 0.96 As alloy substrates, (411)A and (100) GaAs substrates, indicating high application potential of (411)A InGaAs alloy substrates.