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GaAsAl0.3Ga0.7As resonant tunneling diodes with atomically flat interfaces grown on (411)A GaAs substrates by MBE

✍ Scribed by S Shimomura; K Shinohara; K Kasahara; T Motokawa; A Adachi; Y Okamoto; N Sano; S Hiyamizu

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 380 KB
Volume: 40
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(95)00301-0

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