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Extremely flat interfaces in GaAs/AlGaAs quantum wells with high Al content (0.7) grown on GaAs (411)A substrates by molecular beam epitaxy

✍ Scribed by Satoshi Shimomura; Shinjiroh Kaneko; Takeharu Motokawa; Keisuke Shinohara; Akira Adachi; Yasunori Okamoto; Naokatsu Sano; Kazuo Murase; Satoshi Hiyamizu

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 476 KB
Volume: 150
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(95)80244-7

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Pseudomorphic In 0.04 Ga 0.96 As/Al 0.3 Ga 0.7 As quantum wells (QWs) with well widths of 1.2, 2.4, 3.6, 4.8, 7.2 and 12 nm have been grown on (411)A In 0.04 Ga 0.96 As ternary substrates by MBE at growth temperature of T s = 520 • C. The interface flatness of the QWs was characterized by photolumin