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Anisotropy of quantum-size effects in (001)- and (111)-oriented GaAs/Al0.3Ga0.7As multiple-quantum-wells

✍ Scribed by M. Nakayama; I. Kimura; H. Nishimura; T. Komatsu; Y. Kaifu


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
319 KB
Volume
71
Category
Article
ISSN
0038-1098

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We report an investigation of the interface quality of the Al 0.2 Ga 0.8 As/GaAs triple quantum wells (QWs) grown on the GaAs substrates 0 β€’ and 6 β€’ off (100) towards 111 A at a high CO environment, using the photoluminescence technique. The direct correlation between the quantum well quality and th