✦ LIBER ✦

The relation between Ga vacancy concentrations and diffusion lengths in intermixed GaAs/Al0.35Ga0.65As multiple quantum wells

✍ Scribed by Y.T. Oh; T.W. Kang; C.Y. Hong; K.T. Kim; T.W. Kim

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 432 KB
Volume: 96
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(95)00367-3

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Tunneling between two quantum wells: In0

Tunneling between two quantum wells: In0.53Ga0.47As/InP versus GaAs/Al0.35Ga0.65As

✍ M.G.W. Alexander; M. Nido; W.W. Rühle; R. Sauer; K. Ploog; K. Köhler; W.T. Tsang 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 404 KB

Spatially Indirect Excitons in GaAs/Al0.

Spatially Indirect Excitons in GaAs/Al0.35Ga0.65As Double Quantum Wells in the Presence of In-Plane Magnetic Fields

✍ Parlangeli, A. ;Christianen, P.C.M. ;Maan, J.C. ;Soerensen, C.B. ;Lindelof, P.E. 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 183 KB 👁 1 views

We studied the optical properties of GaAs/Al 0X35 Ga 0X65 As asymmetric double quantum wells at T 4X2 K and in the presence of in-plane magnetic fields up to 20 T. In an electric field F 8 45 kV/cm, electrons and holes are respectively confined in the wide and narrow well and form spatially indirect