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Tunneling between two quantum wells: In0.53Ga0.47As/InP versus GaAs/Al0.35Ga0.65As

✍ Scribed by M.G.W. Alexander; M. Nido; W.W. Rühle; R. Sauer; K. Ploog; K. Köhler; W.T. Tsang

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
404 KB
Volume
32
Category
Article
ISSN
0038-1101

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📜 SIMILAR VOLUMES

Localization in highly strained In0.35Ga
Localization in highly strained In0.35Ga0.65As/GaAs ultrathin quantum wells
✍ J. Martinez-Pastor; F. Agulló-Rueda; A. Vinattieri; F. Meseguer; J. Sánchez-Dehe 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 358 KB

We have studied different strained InGaAs/GaAs ultrathin quantum wells grown on vicinal surfaces for various terrace lengths and In contents. From photoluminescence experiments we observe an enhancement of the continuum density of states of quantum wells with large In content ( \(x=0.35\) ). We asso