✦ LIBER ✦

Localization in highly strained In0.35Ga0.65As/GaAs ultrathin quantum wells

✍ Scribed by J. Martinez-Pastor; F. Agulló-Rueda; A. Vinattieri; F. Meseguer; J. Sánchez-Dehesa; M. Colocci; R. Mayoral; A.Marti Ceschin; N. Grandjean; J. Massies

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 358 KB
Volume: 14
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1993.1100

No coin nor oath required. For personal study only.

✦ Synopsis

We have studied different strained InGaAs/GaAs ultrathin quantum wells grown on vicinal surfaces for various terrace lengths and In contents. From photoluminescence experiments we observe an enhancement of the continuum density of states of quantum wells with large In content ( (x=0.35) ). We associate this behavior with the localization of carriers in regions of quasi one-dimensional confinement which are induced by fluctuations in the lateral periodicity of the strained layers. This assumption is supported by time resolved measurements as well.

📜 SIMILAR VOLUMES

Tunneling between two quantum wells: In0

Tunneling between two quantum wells: In0.53Ga0.47As/InP versus GaAs/Al0.35Ga0.65As

✍ M.G.W. Alexander; M. Nido; W.W. Rühle; R. Sauer; K. Ploog; K. Köhler; W.T. Tsang 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 404 KB

Spin orientation by optical pumping of s

Spin orientation by optical pumping of strained In0.35Ga0.65As/GaAs quantum wells grown on vicinal substrates

✍ G. Bacquet; F. Hassen; N. Lauret; J. Barrau; A.Marti Ceschin; N. Grandjean; J. M 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 159 KB

Subband energy studies in intermixed GaA

Subband energy studies in intermixed GaAsAl0.35Ga0.65As multiple quantum wells

✍ Y.T. Oh; S.K. Kim; T.W. Kang; C.Y. Hong; J.J. Lee; H.K. Lee; T.W. Kim 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 415 KB

The relation between Ga vacancy concentr

The relation between Ga vacancy concentrations and diffusion lengths in intermixed GaAs/Al0.35Ga0.65As multiple quantum wells

✍ Y.T. Oh; T.W. Kang; C.Y. Hong; K.T. Kim; T.W. Kim 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 432 KB

Spatially Indirect Excitons in GaAs/Al0.

Spatially Indirect Excitons in GaAs/Al0.35Ga0.65As Double Quantum Wells in the Presence of In-Plane Magnetic Fields

✍ Parlangeli, A. ;Christianen, P.C.M. ;Maan, J.C. ;Soerensen, C.B. ;Lindelof, P.E. 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 183 KB 👁 1 views

We studied the optical properties of GaAs/Al 0X35 Ga 0X65 As asymmetric double quantum wells at T 4X2 K and in the presence of in-plane magnetic fields up to 20 T. In an electric field F 8 45 kV/cm, electrons and holes are respectively confined in the wide and narrow well and form spatially indirect

Photoluminescence study of highly doped,

Photoluminescence study of highly doped, tensile-strained GaAs/In0.07Al0.93As quantum wells

✍ Vishnu Balan; Theda Daniels-Race; Laurie E. McNeil 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 129 KB 👁 1 views

A photoluminescence study of highly doped tensile-strained GaAs quantum wells is made to in¨estigate the feasibility of achie¨ing polarization-independent photodetection. A simulation procedure to predict the photoluminescence peaks is also de¨eloped which shows good agreement with the experimental