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Photoluminescence study of highly doped, tensile-strained GaAs/In0.07Al0.93As quantum wells

✍ Scribed by Vishnu Balan; Theda Daniels-Race; Laurie E. McNeil

Publisher: John Wiley and Sons
Year: 1997
Tongue: English
Weight: 129 KB
Volume: 16
Category: Article
ISSN: 0895-2477
DOI: 10.1002/(sici)1098-2760(199709)16:1<7::aid-mop3>3.0.co;2-h

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✦ Synopsis

A photoluminescence study of highly doped tensile-strained GaAs quantum wells is made to in¨estigate the feasibility of achie¨ing polarization-independent photodetection. A simulation procedure to predict the photoluminescence peaks is also de¨eloped which shows good agreement with the experimental results. A primiti¨e structure for achie¨ing polarization-independent photodetection is also proposed.

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