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Photoluminescence Study of Piezoelectric Polarization in Strained AlxGa1—xN/GaN Single Quantum Wells

✍ Scribed by V. Kirilyuk; P.R. Hageman; P.C.M. Christianen; F.D. Tichelaar; P.K. Larsen

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
100 KB
Volume
228
Category
Article
ISSN
0370-1972

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✦ Synopsis

We report a low temperature photoluminescence study on two identical Al 0.13 Ga 0.87 N/GaN single quantum wells (QWs), which are pseudomorphically grown on either a GaN or an AlGaN buffer layer. The red shift of the QW emission due to the quantum confined Stark effect, is found to be strongest in the QW deposited on AlGaN, in contrast to what is to be expected form the estimated built-in electric fields due to spontaneous and piezoelectric polarization fields. Screening of the built-in electric field by a relatively high sheet charge is one of the possible reasons for the observed discrepancy.

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✍ Wetzel, C. ;Kasumi, M. ;Amano, H. ;Akasaki, I. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 171 KB 👁 2 views

The absorption properties in hetero-polarization GaN/Al x Ga 1Àx N (x ¼ 0:06) quantum well structures are studied in reflection, photoreflection, and photoluminescence excitation spectroscopy and compared with the results of band structure calculations. Above the energy of the main luminescence tran