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Subband energy studies in intermixed GaAsAl0.35Ga0.65As multiple quantum wells

✍ Scribed by Y.T. Oh; S.K. Kim; T.W. Kang; C.Y. Hong; J.J. Lee; H.K. Lee; T.W. Kim


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
415 KB
Volume
93
Category
Article
ISSN
0038-1098

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Localization in highly strained In0.35Ga
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We have studied different strained InGaAs/GaAs ultrathin quantum wells grown on vicinal surfaces for various terrace lengths and In contents. From photoluminescence experiments we observe an enhancement of the continuum density of states of quantum wells with large In content ( \(x=0.35\) ). We asso