A photoluminescence study of highly doped tensile-strained GaAs quantum wells is made to in¨estigate the feasibility of achie¨ing polarization-independent photodetection. A simulation procedure to predict the photoluminescence peaks is also de¨eloped which shows good agreement with the experimental
β¦ LIBER β¦
Photoluminescence studies of modulation-doped In0.60Ga0.40AsIn0.52Al0.48As strained multiple quantum wells
β Scribed by W.Z. Shen; W.G. Tang; Z.Y. Li; S.C. Shen; A. Dimoulas
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 436 KB
- Volume
- 152
- Category
- Article
- ISSN
- 0022-0248
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