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In0.53Ga0.47As-In0.52(Ga1-xAlx)0.48As quasi-parabolic (multi-stepped) quantum wells grown by the pulsed molecular beam method

โœ Scribed by A. Sandhu; Y. Nakata; S. Sasa; S. Hiyamizu


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
245 KB
Volume
33-34
Category
Article
ISSN
0169-4332

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In0.53Ga0.47As>In0.52Al0.48As quantum wi
โœ S. Hiyamizu; Y. Ohno; S. Shimomura ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 423 KB

Self-organized In,,,Ga,,,As/ In,,&.& quantum wire (QWR) structures were formed on (775)B InP substrates by molecular beam epitaxy (MBE) which showed good one-dimensionality (the polarization degree P [ = (I,, -I, )/(I,,+ I, )] as large as 0.2) and long emitting wavelengths in the range of 1.2 um at

Nonparabolic tendency of electron effect
โœ K Tanaka; N Kotera; H Nakamura ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 76 KB

We observed that a series of peaks, which were clearly extracted from a photocurrent difference spectrum, corresponded to interband optical transitions of an In 0.53 Ga 0.47 As/ In 0.52 Al 0.48 As multi-quantum wells structure. The nonparabolic tendency of the electron effective mass was suggested f