In0.53Ga0.47As-In0.52(Ga1-xAlx)0.48As quasi-parabolic (multi-stepped) quantum wells grown by the pulsed molecular beam method
โ Scribed by A. Sandhu; Y. Nakata; S. Sasa; S. Hiyamizu
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 245 KB
- Volume
- 33-34
- Category
- Article
- ISSN
- 0169-4332
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๐ SIMILAR VOLUMES
Self-organized In,,,Ga,,,As/ In,,&.& quantum wire (QWR) structures were formed on (775)B InP substrates by molecular beam epitaxy (MBE) which showed good one-dimensionality (the polarization degree P [ = (I,, -I, )/(I,,+ I, )] as large as 0.2) and long emitting wavelengths in the range of 1.2 um at
We observed that a series of peaks, which were clearly extracted from a photocurrent difference spectrum, corresponded to interband optical transitions of an In 0.53 Ga 0.47 As/ In 0.52 Al 0.48 As multi-quantum wells structure. The nonparabolic tendency of the electron effective mass was suggested f