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The role of deep level traps in barrier height of 4H–SiC Schottky diode

✍ Scribed by G. Zaremba; Z. Adamus; W. Jung; E. Kamińska; M.A. Borysiewicz; K. Korwin-Mikke

Book ID: 116760386
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 407 KB
Volume: 177
Category: Article
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2012.03.051

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