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Influence of pinning trap in Ti/4H–SiC Schottky barrier diode

✍ Scribed by K. Ohtsuka; Y. Matsuno; Y. Hase; H. Sugimoto; K. Fujihira; Y. Tarui; M. Imaizumi; T. Takami; T. Ozeki

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 276 KB
Volume: 6
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2003.08.016

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