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Improved electrical parameters of vacuum annealed Ni/4H-SiC (0 0 0 1) Schottky barrier diode

✍ Scribed by Sanjeev K. Gupta; A. Azam; J. Akhtar

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 964 KB
Volume: 406
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2011.05.001

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