Recrystallization process of phosphorus ion implanted 4H–SiC(1 1 2 −0)

✍ Scribed by M. Satoh; T. Hitomi; T. Suzuki

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 106 KB
• Volume: 242
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2005.08.093

✦ Synopsis

The recrystallization process of the phosphorus ion implantation-induced amorphous layer in 4H-SiC(1 1 2 À0) is investigated in the annealing temperature range from 660 to 720 °C by means of Rutherford backscattering spectrometry. The phosphorus ions are multiply implanted to p-type 4H-SiC(1 1 2 À0) at the energy range from 40 to 230 keV at a total fluence of 1 • 10 15 cm À2 to form the implantation layer with a phosphorus concentration of 4.0 • 10 20 cm À3 and a thickness of 200 nm. The amorphous-substrate interface shifts to the surface in equal thickness intervals for equal annealing time intervals, indicating a uniform recrystallization velocity. The recrystallization rate for the phosphorus implanted 4H-SiC(1 1 2 À0) is 4 times faster than that in argon implanted samples and increased with an activation energy of 3.4 eV, which is identical to that of the recrystallization of amorphized 6H-SiC(1 1 2 À0) and (1 1 À0 0).