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A comparison of extended defect formation induced by ion implantation in (0 0 0 1) and (1 1 2̄ 0) 4H-SiC

✍ Scribed by J Wong-Leung; M.K Linnarsson; B.G Svensson

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
277 KB
Volume
340-342
Category
Article
ISSN
0921-4526

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