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Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes

✍ Scribed by S. Toumi; A. Ferhat-Hamida; L. Boussouar; A. Sellai; Z. Ouennoughi; H. Ryssel


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
615 KB
Volume
86
Category
Article
ISSN
0167-9317

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Investigation of barrier inhomogeneities
✍ L. Boussouar; Z. Ouennoughi; N. Rouag; A. Sellai; R. Weiss; H. Ryssel 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 860 KB

Using current-voltage measurements, we have investigated the electrical behavior of molybdenum on 4H-SiC Schottky diodes of various areas and having different edge terminations consisting of high resistivity guard rings manufactured by carbon ion-implantation. Both forward and reverse electrical ch