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Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy

✍ Scribed by S. A. Reshanov; G. Pensl; K. Danno; T. Kimoto; S. Hishiki; T. Ohshima; H. Itoh; F. Yan; R. P. Devaty; W. J. Choyke

Book ID: 121846528
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 575 KB
Volume: 102
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2818050

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