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Reduction of Schottky barrier heights by surface oxidation of GaAs and its influence on DLTS signals for the midgap level EL2

✍ Scribed by Fumio Hasegawa; Masaaki Onomura; Chikako Mogi; Yasuo Nannichi


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
580 KB
Volume
31
Category
Article
ISSN
0038-1101

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