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Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4H-SiC

✍ Scribed by A. S. Potapov; P. A. Ivanov; T. P. Samsonova


Book ID
111444325
Publisher
Springer
Year
2009
Tongue
English
Weight
179 KB
Volume
43
Category
Article
ISSN
1063-7826

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Effects of chemical treatment on barrier
✍ M. Diale; F.D. Auret πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 193 KB

We have studied Au/n-GaN Schottky barrier diodes. GaN surfaces have been prepared by cleaning in HCl and (NH 4 ) 2 S prior to metal deposition. The zero-biased barrier heights and ideality factors obtained from the current-voltage characteristics differ from diode to diode, although all the samples