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Effect of rapid thermal annealing on the current-voltage characteristics of 4H-SiC Schottky diodes

✍ Scribed by Ivanov, P. A.; Il’inskaya, N. D.; Potapov, A. S.; Samsonova, T. P.; Afanas’ev, A. V.; Il’in, V. A.


Book ID
120081150
Publisher
Springer
Year
2013
Tongue
English
Weight
188 KB
Volume
47
Category
Article
ISSN
1063-7826

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