The effects of the temperature and annealing on current–voltage characteristics of Ni/n-type 6H–SiC Schottky diode

✍ Scribed by A. Sefaoğlu; S. Duman; S. Doğan; B. Gürbulak; S. Tüzemen; A. Türüt

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 208 KB
• Volume: 85
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2007.11.005

✦ Synopsis

The temperature dependence of current-voltage (I-V) characteristics of as-fabricated and annealed Ni/n-type 6H-SiC Schottky diode has been investigated in the temperature range of 100-500 K. The forward I-V characteristics have been analysed on the basis of standard thermionic emission theory. It has been shown that the ideality factor (n) decreases while the barrier height (U b ) increases with increasing temperature. The values of U b and n are obtained between 0.65-1.25 eV and 1.70-1.16 for as-fabricated and 0.74-1.70 eV and 1.84-1.19 for annealed diode in the temperature range of 100-500 K, respectively. The I-V characteristics of the diode showed an increase in the Schottky barrier height, along with a reduction of the device leakage current by annealing the diode at 973 K for 2 min.