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The influence of high-temperature annealing on SiC schottky diode characteristics

โœ Scribed by Q. Zhang; T. S. Sudarshan

Book ID
107452703
Publisher
Springer US
Year
2001
Tongue
English
Weight
369 KB
Volume
30
Category
Article
ISSN
0361-5235

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The temperature dependence of current-voltage (I-V) characteristics of as-fabricated and annealed Ni/n-type 6H-SiC Schottky diode has been investigated in the temperature range of 100-500 K. The forward I-V characteristics have been analysed on the basis of standard thermionic emission theory. It ha