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Effect of vacuum annealing on electrical characteristics of Ni-Si schottky diodes

✍ Scribed by Chot, Tran

Book ID
105378046
Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
258 KB
Volume
86
Category
Article
ISSN
0031-8965

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πŸ“œ SIMILAR VOLUMES

Effect of annealing on interface state d
Effect of annealing on interface state density of Ni-silicided/Si1βˆ’xGex Schottky diode
✍ A.R. Saha; S. Chattopadhyay; G.K. Dalapati; C. Bose; C.K. Maiti πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 277 KB

Nickel-silicided/Si 1Γ€x Ge x Schottky junctions are fabricated by annealing the deposited nickel (Ni) film on relaxed Si 0.75 Ge 0.25 layer at a temperature range of 300-900 1C for 60 s. Energy dispersive spectroscopy (EDS) was used to quantify the Ge composition in silicide/germanosilicide grains,