𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effect of annealing on interface state density of Ni-silicided/Si1−xGex Schottky diode

✍ Scribed by A.R. Saha; S. Chattopadhyay; G.K. Dalapati; C. Bose; C.K. Maiti

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
277 KB
Volume
8
Category
Article
ISSN
1369-8001

No coin nor oath required. For personal study only.

✦ Synopsis

Nickel-silicided/Si 1Àx Ge x Schottky junctions are fabricated by annealing the deposited nickel (Ni) film on relaxed Si 0.75 Ge 0.25 layer at a temperature range of 300-900 1C for 60 s. Energy dispersive spectroscopy (EDS) was used to quantify the Ge composition in silicide/germanosilicide grains, formed during annealing. Schottky barrier height (F B ) of the silicided diodes was extracted from forward current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The forward I-V characteristics were also simulated for understanding the influence of interfacial layer present at the silicide and Si 0.75 Ge 0.25 interface. The capacitance-voltage method was used to determine the energy distribution of the interface state density (D it ) and was found to decrease with increasing energy from the valence band edge.

📜 SIMILAR VOLUMES

Analytical calculation of effective dens
Analytical calculation of effective densities of states, intrinsic carrier concentration and ionized doping concentration in strained Si1−xGex alloys on (001) Si substrates at room and low temperatures
✍ Zhang Wan-rong; Zeng Zheng; Luo Jin-sheng 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 476 KB

In this paper, the effective densities of states for the conduction and valence bands, Nc and N,, the intrinsic carrier concentration ni and the ionized doping concentration in strained Si,\_,Ge, layers grown on (001) Si substrates are analytically calculated, and their temperature and Ge fraction d