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Effect of nanopatches on electrical behavior of Ni/n-type Si Schottky diode

✍ Scribed by Sh. Rahmatallahpur; M. Yegane

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
996 KB
Volume
406
Category
Article
ISSN
0921-4526

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Nickel-silicided/Si 1Γ€x Ge x Schottky junctions are fabricated by annealing the deposited nickel (Ni) film on relaxed Si 0.75 Ge 0.25 layer at a temperature range of 300-900 1C for 60 s. Energy dispersive spectroscopy (EDS) was used to quantify the Ge composition in silicide/germanosilicide grains,