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Electrical characterization of interface states in Ni/n-Si(111) Schottky diodes from (C-V) characteristics

✍ Scribed by P.P. Sahay; M. Shamsuddin; R.S. Srivastava


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
387 KB
Volume
23
Category
Article
ISSN
0026-2692

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Characterization of interface states at
✍ P. P. Sahay; Prof. R. S. Srivastava πŸ“‚ Article πŸ“… 1990 πŸ› John Wiley and Sons 🌐 English βš– 322 KB

## Characterization of Interface States at Ni/n-Si Schottky Barriers from Z -V Characteristics Experiments were performed on Ni/n-Si(l1 1) Schottky diodes fabricated by the thermal vacuum deposition of nickel on n/n+ Si epitaxial wafer attorr pressure. The non-equilibrium occupation functions of t