Characterization of interface states at
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P. P. Sahay; Prof. R. S. Srivastava
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Article
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1990
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John Wiley and Sons
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English
β 322 KB
## Characterization of Interface States at Ni/n-Si Schottky Barriers from Z -V Characteristics Experiments were performed on Ni/n-Si(l1 1) Schottky diodes fabricated by the thermal vacuum deposition of nickel on n/n+ Si epitaxial wafer attorr pressure. The non-equilibrium occupation functions of t