Characterization of interface states at Ni/n-Si Schottky barriers from I – V characteristics

✍ Scribed by P. P. Sahay; Prof. R. S. Srivastava

• Publisher: John Wiley and Sons
• Year: 1990
• Tongue: English
• Weight: 322 KB
• Volume: 25
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.2170251218

✦ Synopsis

Characterization of Interface States at Ni/n-Si Schottky Barriers from Z -V Characteristics

Experiments were performed on Ni/n-Si(l1 1) Schottky diodes fabricated by the thermal vacuum deposition of nickel on n/n+ Si epitaxial wafer attorr pressure. The non-equilibrium occupation functions of the interface states were studied using the Shockley-Read-Hall (SRH) theory and considering the charge exchange between metal and interface states. Interface states density was determined from (I -V) characteristics using metal-interfacial layer-semiconductor (MIS) structure. The density was found to be in the range of 10" eV-' cm-' with a broad peak in the band gap of Si at about 0.554 eV below the conduction band edge.