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Barrier characteristics of PtSip-Si Schottky diodes as determined from I-V-T measurements

✍ Scribed by P.G. McCafferty; A. Sellai; P. Dawson; H. Elabd


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
890 KB
Volume
39
Category
Article
ISSN
0038-1101

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## Characterization of Interface States at Ni/n-Si Schottky Barriers from Z -V Characteristics Experiments were performed on Ni/n-Si(l1 1) Schottky diodes fabricated by the thermal vacuum deposition of nickel on n/n+ Si epitaxial wafer attorr pressure. The non-equilibrium occupation functions of t