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Temperature dependence of I-V and C-V characteristics of Ni/n-CdF2 Schottky barrier type diodes

โœ Scribed by P. Cova; A. Singh

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
926 KB
Volume
33
Category
Article
ISSN
0038-1101

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โœ P. P. Sahay; Prof. R. S. Srivastava ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 322 KB

## Characterization of Interface States at Ni/n-Si Schottky Barriers from Z -V Characteristics Experiments were performed on Ni/n-Si(l1 1) Schottky diodes fabricated by the thermal vacuum deposition of nickel on n/n+ Si epitaxial wafer attorr pressure. The non-equilibrium occupation functions of t