Influence of Dislocations on I–V Characteristics of Schottky Diodes Prepared on n-Type 6H-SiC

✍ Scribed by J.F. Barbot; C. Blanchard; J.L. Demenet

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 123 KB
• Volume: 222
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200011)222:1<159::aid-pssb159>3.0.co;2-i