✦ LIBER ✦

A simple interfacial-layer model for the nonideal I-V and C-V characteristics of the Schottky-barrier diode

✍ Scribed by Hsun-Hua Tseng; Ching-Yuan Wu

Publisher: Elsevier Science
Year: 1987
Tongue: English
Weight: 759 KB
Volume: 30
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(87)90166-3

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Simple interface-layer model for the non

Simple interface-layer model for the nonideal characteristics of the Schottky-barrier diode

✍ J. Szatkowski; K. Sierański 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 190 KB

Parameter extraction from non-ideal C−V

Parameter extraction from non-ideal C−V characteristics of a Schottky diode with and without interfacial layer

✍ Abdulmecit Türüt; Necati Yalçin; Mustafa Saǧlam 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 488 KB

Modeling of the I–V characteristics of s

Modeling of the I–V characteristics of single and double barrier tunneling diodes using A k · p band model

✍ D. Mui; M. Patil; J. Chen; S. Agarwala; N.S. Kumar; H. Morkoc 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 536 KB

A novel model for microwave C–V characte

A novel model for microwave C–V characteristics of an integrated planar Schottky varactor diode in MMICs

✍ Tian Tong; Luo Jingsheng; Li Zuhua; Chen Tangsheng; Lin Jinting 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 150 KB 👁 1 views

A physics-based model for the C᎐V characteristics of an integrated planar Schottky ¨aractor doide in the microwa¨e band is presented. The model takes into account the influences of the distributed channel series resistance introduced by the planar structure, the distributed junction capacitance, the

A computer-aided simulation model for th

A computer-aided simulation model for the I–V characteristic of M-n-p silicon Schottky-barrier diodes produced by use of low-energy arsenic-ion implantation

✍ Ching-Yuan Wu; Ming-Chein Chang; An-Jui Shey 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 758 KB

Development and confirmation of the unif

Development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compounds

✍ W.E. Spicer; S. Eglash; I. Lindau; C.Y. Su; P.R. Skeath 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 866 KB