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A novel model for microwave C–V characteristics of an integrated planar Schottky varactor diode in MMICs

✍ Scribed by Tian Tong; Luo Jingsheng; Li Zuhua; Chen Tangsheng; Lin Jinting


Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
150 KB
Volume
18
Category
Article
ISSN
0895-2477

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✦ Synopsis


A physics-based model for the C᎐V characteristics of an integrated planar Schottky ¨aractor doide in the microwa¨e band is presented. The model takes into account the influences of the distributed channel series resistance introduced by the planar structure, the distributed junction capacitance, the junction re¨erse saturation leakage, and the sidewall capacitance on the C᎐V characteristics, and re¨eals the dependence of the C᎐V characteristics on the operating frequency. The theory is in good agreement with experimental results.