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Modeling of the I–V characteristics of single and double barrier tunneling diodes using A k · p band model

✍ Scribed by D. Mui; M. Patil; J. Chen; S. Agarwala; N.S. Kumar; H. Morkoc


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
536 KB
Volume
32
Category
Article
ISSN
0038-1101

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## Abstract In this paper, a simple and effective method of extracting the values of the parameters of the Angelov nonlinear I(V) model of GaAs HJ‐FETs is presented. In the proposed method, the coefficients of the function ψ are determined from I(V) pulse measurements, using the least‐squares optim