A computer-aided simulation model for the I–V characteristic of M-n-p silicon Schottky-barrier diodes produced by use of low-energy arsenic-ion implantation: Ching-Yuan Wu, Ming-Chein Chang and An-Jui Shey. Solid-St. Electron.26 (9), 893 (1983)

• Publisher: Elsevier Science
• Year: 1984
• Tongue: English
• Weight: 207 KB
• Volume: 24
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(84)90620-6