A computer-aided simulation model for the I–V characteristic of M-n-p silicon Schottky-barrier diodes produced by use of low-energy arsenic-ion implantation

✍ Scribed by Ching-Yuan Wu; Ming-Chein Chang; An-Jui Shey

• Publisher: Elsevier Science
• Year: 1983
• Tongue: English
• Weight: 758 KB
• Volume: 26
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(83)90061-8