✦ LIBER ✦

Modeling the I-V characteristics of the power microwave FETs with the Angelov model using pulse measurements

✍ Scribed by J. R. Loo-Yau; J. A. Reynoso-Hernández; J. E. Zuñiga; F. I. Hirata-Flores; Hugo Ascencio-Ramírez

Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 174 KB
Volume: 48
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.21596

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✦ Synopsis

Abstract

In this paper, a simple and effective method of extracting the values of the parameters of the Angelov nonlinear I(V) model of GaAs HJ‐FETs is presented. In the proposed method, the coefficients of the function ψ are determined from I(V) pulse measurements, using the least‐squares optimization method. The utility of the proposed method is demonstrated by modeling the I(V) characteristic of the different families of packaged medium‐power GaAs HJ‐FETs designed for mobile communications. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1046–1050, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21596

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