An accurate mobility model for the I–V characteristics of n-channel enhancement-mode MOSFETs with single-channel boron implantation

✍ Scribed by Ching-Yuan Wu; Yeong-Wen Daih

• Publisher: Elsevier Science
• Year: 1985
• Tongue: English
• Weight: 652 KB
• Volume: 28
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(85)90053-x