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Effect of 6 MeV electron irradiation on electrical characteristics of the Au/n-Si/Al Schottky diode

✍ Scribed by E. Uğurel; Ş. Aydoğan; K. Şerifoğlu; A. Türüt

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
207 KB
Volume
85
Category
Article
ISSN
0167-9317

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Schottky diodes were fabricated by depositing gold on a single grain and on grains incorporating a grain boundary of tellurium-doped GaSb crystals grown by the vertical Bridgman method. The barrier height (¢B.), series resistance (R), dark saturation current density (Js) and the ideality factor (n)