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Effect of hydrogen peroxide treatment on the electrical characteristics of Au/ZnO epitaxial Schottky diode

โœ Scribed by C.S. Singh; G. Agarwal; G. Durga Rao; Sujeet Chaudhary; R. Singh

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
473 KB
Volume
14
Category
Article
ISSN
1369-8001

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Grain boundary effect on the electrical
Grain boundary effect on the electrical characteristics of Au๎—ธn๎—ธGaSb Schottky diodes
โœ S. Basu; U.N. Roy ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 137 KB

Schottky diodes were fabricated by depositing gold on a single grain and on grains incorporating a grain boundary of tellurium-doped GaSb crystals grown by the vertical Bridgman method. The barrier height (ยขB.), series resistance (R), dark saturation current density (Js) and the ideality factor (n)