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The effect of p-region carrier concentration on the electrical characteristics of germanium epitaxial tunnel diodes

โœ Scribed by R. Glicksman; R.M. Minton

Publisher
Elsevier Science
Year
1965
Tongue
English
Weight
216 KB
Volume
8
Category
Article
ISSN
0038-1101

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Schottky diodes were fabricated by depositing gold on a single grain and on grains incorporating a grain boundary of tellurium-doped GaSb crystals grown by the vertical Bridgman method. The barrier height (ยขB.), series resistance (R), dark saturation current density (Js) and the ideality factor (n)