Grain boundary effect on the electrical characteristics of AunGaSb Schottky diodes

✍ Scribed by S. Basu; U.N. Roy

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 137 KB
• Volume: 8
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(91)90013-l

✦ Synopsis

Schottky diodes were fabricated by depositing gold on a single grain and on grains incorporating a grain boundary of tellurium-doped GaSb crystals grown by the vertical Bridgman method. The barrier height (¢B.), series resistance (R), dark saturation current density (Js) and the ideality factor (n) calculated from the I-V and C-V relations and from the relation of Cheung have been compared. Higher Js and n values are a result of tunnelling phenomena and heavy doping concentrations of the GaSb samples.