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Grain boundary effect on the electrical characteristics of AunGaSb Schottky diodes

✍ Scribed by S. Basu; U.N. Roy


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
137 KB
Volume
8
Category
Article
ISSN
0921-5107

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✦ Synopsis


Schottky diodes were fabricated by depositing gold on a single grain and on grains incorporating a grain boundary of tellurium-doped GaSb crystals grown by the vertical Bridgman method. The barrier height (¢B.), series resistance (R), dark saturation current density (Js) and the ideality factor (n) calculated from the I-V and C-V relations and from the relation of Cheung have been compared. Higher Js and n values are a result of tunnelling phenomena and heavy doping concentrations of the GaSb samples.


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