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The influence of structural defects and concentration inhomogeneities in epitaxial gallium arsenide on the electrical characteristics of impact ionization avalanche transit time diodes

✍ Scribed by R.V. Konakova; Yu.M. Shvarts


Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
388 KB
Volume
78
Category
Article
ISSN
0040-6090

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