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High-temperature characteristics of GaN nano-Schottky diodes

✍ Scribed by Seung-Yong Lee; Chan-Oh Jang; Jung-Hwan Hyung; Tae-Hong Kim; Sang-Kwon Lee


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
486 KB
Volume
40
Category
Article
ISSN
1386-9477

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Temperature variation of current–voltage
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Current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky diodes have been measured in 40-320 K temperature range, and analyzed in terms of thermionic emission theory by incorporating the concept of barrier inhomogeneity at the metal/semiconductor interface through a Gaussian distribution functi