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Comparison of current-voltage characteristics of n- and p-type 6H-SiC Schottky diodes

✍ Scribed by Q. Zhang; V. Madangarli; M. Tarplee; T. S. Sudarshan

Book ID
107452593
Publisher
Springer US
Year
2001
Tongue
English
Weight
223 KB
Volume
30
Category
Article
ISSN
0361-5235

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The effects of the temperature and annealing on current–voltage characteristics of Ni/n-type 6H–SiC Schottky diode
✍ A. Sefaoğlu; S. Duman; S. Doğan; B. Gürbulak; S. Tüzemen; A. Türüt 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 208 KB

The temperature dependence of current-voltage (I-V) characteristics of as-fabricated and annealed Ni/n-type 6H-SiC Schottky diode has been investigated in the temperature range of 100-500 K. The forward I-V characteristics have been analysed on the basis of standard thermionic emission theory. It ha